Empirical modeling of the refractive index for (AlGaIn)As lattice matched to InP
نویسندگان
چکیده
A composition-dependent empirical interpolation formula for the refractive index of AlGaInAs epilayers lattice matched to InP substrate has been determined by using a reflection spectroscopy technique. The 2 μm thick (AlGaIn)As layers have been grown by MBE as well as MOVPE and were characterized by x-ray diffractometry and photoluminescence measurements. The measured data from these etalon structures were fitted by using a Sellmeier equation (single oscillator model) to retrieve the refraction index for wavelengths between 2.5 and 1 μm. The resulting accurate expression will be very useful for designing optoelectronic devices like VCSELs. (Some figures in this article are in colour only in the electronic version)
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